Samsung 990 EVO Plus NVMe M.2 SSD - 1TB & 2TB Capacities | Blazing 7250MB/s Speed with PCIe 5.0 x2 / 4.0 x4 Hybrid Interface

Boasting up to 7250MB/s reads and versatile PCIe 5.0 x2 / 4.0 x4 compatibility, these drives are ideal for high-speed gaming, intensive content creation, and seamless multitasking.
  • Form Factor: M.2 (2280) | PCIe® Gen 4.0 x4 / 5.0 x2 NVMe™ 2.0
  • Samsung V-NAND TLC (8th-gen / 236-layer)
  • Cache Memory: HMB (Host Memory Buffer)
  • 100% Original Samsung
Product Code: 990 EVO Plus
Brand: Samsung
Warranty: 1 Year
Availability: In Stock
Call for price 0342 555 1880
Storage

Key Features (Common to both 1TB & 2TB Capacities):

  • Exceptional Speed & Responsiveness: Experience a significant leap in performance with sequential read speeds of up to 7,250 MB/s and sequential write speeds of up to 6,300 MB/s. This raw power translates to lightning-fast boot-ups, instantaneous application loading, and accelerated transfer of massive files, dramatically enhancing your overall computing experience.

  • Hybrid PCIe Interface (Gen 5.0 x2 / Gen 4.0 x4): A revolutionary feature, the 990 EVO Plus intelligently supports both PCIe Gen 5.0 x2 and PCIe Gen 4.0 x4 interfaces. This ensures optimal performance across a broad spectrum of motherboards – delivering robust speeds on current PCIe 4.0 platforms and providing forward compatibility for emerging PCIe 5.0 systems (utilizing two lanes).

  • Cutting-Edge V-NAND Technology: Built with Samsung's latest 8th-generation (236-layer) V-NAND TLC flash memory. This advanced technology offers higher density, improved power efficiency, and enhanced durability, pushing the boundaries of what's possible in SSD storage.

  • Optimized In-House Piccolo Controller: At its core is Samsung's proprietary Piccolo controller, finely tuned to manage the high data throughput of the 990 EVO Plus. This 5nm controller ensures stable, high-performance operation while maintaining superior power efficiency.

  • Intelligent TurboWrite 2.0: Harness the power of an enhanced Intelligent TurboWrite 2.0. This dynamic technology utilizes a large SLC buffer to accelerate write speeds during burst workloads, ensuring consistent peak performance even with demanding data transfers.

  • Remarkable Power Efficiency: The 990 EVO Plus is engineered for enhanced power efficiency, delivering more megabytes per watt. This not only contributes to cooler operating temperatures within your system but also extends battery life for laptops, making it an ideal choice for both stationary and mobile setups.

  • Advanced Thermal Management: Equipped with an efficiency-boosting nickel-coated controller and a sophisticated heat spreader label. Combined with Samsung's Dynamic Thermal Guard technology, these features actively manage the drive's temperature, preventing performance throttling during intense and prolonged operations.

  • Host Memory Buffer (HMB) Technology: By leveraging your system's DRAM as cache, the 990 EVO Plus maintains high performance without requiring dedicated DRAM on the drive itself, contributing to its optimized power consumption and cost-effectiveness.

  • Compact M.2 2280 Form Factor: The industry-standard M.2 (2280) form factor ensures wide compatibility with most modern desktop PCs, high-performance laptops, and compatible gaming consoles, allowing for a neat and cable-free installation.

  • Comprehensive Management with Samsung Magician Software: Gain full control and insights into your SSD's health and performance with the intuitive Samsung Magician software suite. Features include drive health monitoring, performance benchmarks, firmware updates, and data security options like encryption.

Capacity-Specific Details:

FeatureSamsung 990 EVO Plus 1TBSamsung 990 EVO Plus 2TB
Sequential Read SpeedUp to 7,150 MB/sUp to 7,250 MB/s
Sequential Write SpeedUp to 6,300 MB/sUp to 6,300 MB/s
Random Read (4KB, QD32)Up to 850,000 IOPSUp to 1,000,000 IOPS
Random Write (4KB, QD32)Up to 1,350,000 IOPSUp to 1,350,000 IOPS
Endurance (TBW)600 TBW (Terabytes Written)1,200 TBW (Terabytes Written)
Avg. Power ConsumptionRead: 4.3 W / Write: 4.2 WRead: 4.6 W / Write: 4.2 W
Part NumberMZ-V9S1T0BWMZ-V9S2T0BW

  • Form Factor: M.2 (2280)

  • Interface: PCIe® Gen 4.0 x4 / 5.0 x2 NVMe™ 2.0

  • Storage Memory: Samsung V-NAND TLC (8th-gen / 236-layer)

  • Controller: Samsung in-house Piccolo Controller (5nm)

  • Cache Memory: HMB (Host Memory Buffer)

  • Dimensions (W x H x D): Max 80.15 x 22.15 x 2.38 mm

  • Weight: Max 9.0g

  • TRIM Support: Supported

  • S.M.A.R.T Support: Supported

  • GC (Garbage Collection): Auto Garbage Collection Algorithm

  • Encryption Support: AES 256-bit Encryption (Class 0), TCG/Opal V2.0, IEEE1667 (Encrypted drive)

  • Device Sleep Mode Support: Yes (Typical 5mW)

  • Reliability (MTBF): 1.5 Million Hours

  • Operating Temperature: 0 - 70 ℃

  • Shock Resistance: 1,500 G & 0.5 ms (Half sine)

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